Albrecht, M.M.AlbrechtPerez, D.D.PerezMartens, R.C.R.C.MartensBauer, A.J.A.J.BauerErlbacher, T.T.Erlbacher2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/40851910.4028/www.scientific.net/MSF.1004.1123In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the mobility of the n-MOSFET was increased from 13 to 23 cm2/Vs whereas the mobility of the p-MOSFET remained constant at 6 cm2/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain was increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C.enanalog CMOS circuitschannel implantationhigh temperaturemobilityMOSFETthreshold voltage670620530conference paper