Döscher, H.H.DöscherLilienkamp, G.G.LilienkampIskra, P.P.IskraDaum, W.W.DaumHelsch, G.G.HelschBecker, S.S.BeckerWrobel, R.J.R.J.WrobelWeiss, H.H.WeissSuchorski, Y.Y.Suchorski2022-03-042022-03-042010https://publica.fraunhofer.de/handle/publica/22363010.1063/1.3340830ZrO2 films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO2 films are stable against heating (up to 700°C) in a moderate oxygen atmosphere (2× 10-5 mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000°C.en621530journal article