Kaumanns, R.R.KaumannsGrote, N.N.GroteBach, H.-G.H.-G.BachFidorra, F.F.Fidorra2022-03-082022-03-081987https://publica.fraunhofer.de/handle/publica/316043A process to simultaneously form high-quality ohmic contacts to n-InP and p-InGaAs has been developed. Ti-Au metallization was applied to n-InP following an Ar+-sputter etching treatment and to p-InGaAs after Zn diffusion from doped spin-on glass. Utilizing a selective-wet etching step for the p-type material permits simultaneous fabrication of these contacts with specific contact resistances of well below 1*10-6 Omega cm2.endiffusion in solidsetchinggallium arsenidegoldiii-v semiconductorsindium compoundsmetallisationohmic contactssemiconductor-metal boundariestitaniumzincsemiconducting materialsn-type materialmetallizationar+-sputter etching treatmentdiffusiondoped spin-on glassselective-wet etching stepp-type materialsimultaneous fabricationspecific contact resistancesZnTi-Au-InPTi-Au-InGaAs621conference paper