More than 1200 V Breakdown and Low Area-Specific On-State Resistances by Progress in Lateral GaN-on-Si and GaN-on-Insulator Technologies

Reiner, RichardRichardReinerMönch, StefanStefanMönchMüller, StefanStefanMüllerWaltereit, PatrickPatrickWaltereitBenkhelifa, FouadFouadBenkhelifaBasler, MichaelMichaelBaslerMikulla, MichaelMichaelMikullaQuay, RüdigerRüdigerQuay2025-01-302025-01-302024https://publica.fraunhofer.de/handle/publica/48312110.30420/566262069This work focuses on the recent developments of lateral GaN-HEMTs for the 1200 V class. Results of GaN-on-Si and GaN-on-SiC technology with static off-state voltages of over 1200 V and low areaspecific on-state resistances are presented. The switching performance is demonstrated by a GaN-on-Si power device in a double-pulse setup with a voltage up to 1100 V and a static specific resistance of RON·A = 2.5 mΩ·cm². The results are compared with state-of-the-art devices and technologies. In addition, economic aspects of GaN technologies on Si and highly insulating substrates are discussed.enMore than 1200 V Breakdown and Low Area-Specific On-State Resistances by Progress in Lateral GaN-on-Si and GaN-on-Insulator Technologiesconference paper