Berberich, S.E.S.E.BerberichBauer, A.J.A.J.BauerRyssel, H.H.Ryssel2022-03-102022-03-102007https://publica.fraunhofer.de/handle/publica/35685410.1109/EPE.2007.4417708In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400 V application. This device is realized in silicon technology which allows process reproducibility, high accuracy in capacitance values, and high quality of the dielectric layers (i.e., endurance at high electric field strengths). It can be manufactured discrete or as part of a monolithic integrated circuit. The outstanding properties of the device are a high ratio of capacitance value to consumed silicon area (capacitance enlargement of more than a factor of 16 in comparison to plane capacitors) and very stable capacitance values over a broad temperature range (i.e., average of 24 ppm/°C from 20-175°C).encapacitorelemental semiconductorpassive networkpower semiconductor devicesilicon670620530conference paper