Kallenbach, S.S.KallenbachAidam, RolfRolfAidamLösch, R.R.LöschKaufel, G.G.KaufelKelemen, M.T.M.T.KelemenMikulla, MichaelMichaelMikullaWeimann, G.G.Weimann2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21147710.1109/LPT.2006.870124We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.en14xx nmhigh brightnessInGaAsPsemiconductor laserssolid-cource molecular beam epitaxy (SSMBE)62166753514xx-nm high brightness tapered diode lasers grown by solid-source MBEjournal article