Bushehri, E.E.BushehriThiede, A.A.ThiedeStaroselsky, V.V.StaroselskyTimochenkov, V.V.TimochenkovLienhart, H.H.LienhartBratov, V.V.BratovJakobus, T.T.Jakobus2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/19236210.1049/el:19980692A T&H circuit with a sampling rate of 6Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective sampling rate with an insignificant increase in area compared to the previously reported solutions.enAbtast-Halte-Schaltunganalog-digital conversionAnalog-Digital-UmsetzungFolge-Halte-SchaltkreisGaAs HEMThigh speed electronicHochgeschwindigkeitselektroniksample and holdtrack and hold621667384Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology6 Gsample/s Folge-Halte-Schaltkreis mit Doppelbrücke in AlGaAs/GaAs/AlGaAs HEMT-Technologiejournal article