Falidas, Konstantinos EfstathiosKonstantinos EfstathiosFalidasMertens, KonstantinKonstantinMertensHoffmann, RaikRaikHoffmannCzernohorsky, MalteMalteCzernohorskyHeitmann, J.J.Heitmann2022-11-252025-02-252022-11-252022https://publica.fraunhofer.de/handle/publica/42919310.1109/VLSI-TSA54299.2022.97709772-s2.0-85130495483An experimental study of MIM decoupling capacitors placed in the BEOL of 300mm wafers using Al2O3 within HfO2 dielectric thin films is reported. By increasing aluminum concentration (7.9%-14.3%) within the dielectric insulator, a capacitance density of up to 27.6 fF/µm2 with linearity of 1610 ppm/(MV/cm)2 at 10kHz was achieved. J-E and dielectric breakdown characteristics at temperatures from -50°C to +150°C were analyzed. Low leakage current (<0.1µA/cm2) was measured for up to 100°C. Further, time-dependent dielectric breakdown reliability measurements under constant field stress were investigated over temperature (25-150°C). Capacitors reached 1000 years of extrapolated lifetime for all Al concentrations (7.9%-14.3%) at 25°C.enconference paper