Dammann, MichaelMichaelDammannChertouk, M.M.ChertoukJantz, W.W.JantzKöhler, KlausKlausKöhlerMarsetz, W.W.MarsetzSchmidt, K.K.SchmidtWeimann, G.G.Weimann2022-03-032022-03-032000https://publica.fraunhofer.de/handle/publica/19692210.1016/S0026-2714(99)00206-1By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V d = 1 V excellent long term stability in nitrogen ambient was observed. Increasing the drain voltage to V d = 2 V at constant channel temperature leads to a faster degradation rate which is caused by field accelerated degradation mechanism, probably involving fluorine diffusion. The influence of gate width on channel temperature and reliability was found to be small.enInP-based HEMTreliabilityZuverlässigkeitdrain voltageDrainspannungchannel temperatureKanaltemperaturfluorine diffusionFluor Diffusionactivation energyAktivierungsenergiefield accelerated diffusionfeldbeschleunigte DiffusionArrhenius plot621667journal article