Morgott, S.S.MorgottChazan, P.P.ChazanMikulla, MichaelMichaelMikullaWalther, MartinMartinWaltherKiefer, R.R.KieferBraunstein, J.J.BraunsteinWeimann, G.G.Weimann2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/19263510.1049/el:19980442A tunable external cavity semiconductor laser with > 1 W CW near-diffraction-limited output power between 1030 and 1085 nm is demonstrated. A tapered power amplifier with novel epilayer structure is used as the gain element. Near the gain peak at 1055 nm an output power of 1.6W CW is obtained.enabstimmbarer Laserexternal cavity laserexterner ResonatorHalbleiter-Lasersemiconductor lasertunable laser621667384journal article