Werner, SabrinaSabrinaWernerLohmüller, ElmarElmarLohmüllerWolf, AndreasAndreasWolfClement, FlorianFlorianClement2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24491910.1016/j.solmat.2016.05.064This work demonstrates low-ohmic electrical contacting of phosphorus- and boron-doped surfaces (textured and passivated) with maximum dopant concentrations of only Nmax≈2·1019 cm−3 by screen-printed and fired metallization. The achieved results using commercially available metallization pastes allow for a substantial extension of the limits in which screen-printed and fired metallization can be applied for solar cell fabrication. Despite the very low Nmax, the investigations reveal reasonably low specific contact resistances of rC=(8±3) mO cm2 for a silver paste on alkaline textured, phosphorus-doped, and SiNx passivated surfaces, and rC=(3.7±0.7) mO cm2 for a silver aluminum paste on alkaline textured, boron-doped, and Al2O3/SiNx passivated surfaces.enPV Produktionstechnologie und QualitätssicherungPhotovoltaikSilicium-PhotovoltaikPilotherstellung von industrienahen Solarzellensolar cellscontact resistanceprinting metallizationphosphorusboron621journal article