Brusaterra, EnricoEnricoBrusaterraBahat Treidel, EldadEldadBahat TreidelDeriks, LutzLutzDeriksDanylyuk, SerhiySerhiyDanylyukBrandl, E.E.BrandlBravin, JulianJulianBravinPawlak, M.M.PawlakKülberg, AlexAlexKülbergSchiersch, M.M.SchierschThies, AndreasAndreasThiesHilt, OliverOliverHilt2025-03-192025-03-192025https://publica.fraunhofer.de/handle/publica/48564510.1109/LED.2025.3540156In this work, we demonstrate vertical GaN pn-diodes for high voltage applications initially grown and processed on 4” sapphire substrates and then transferred to 4” tungsten substrates to achieve a fully vertical conduction path. Laser lift-off was used to separate the GaN-membrane device structures from the initial sapphire substrate. The diodes show improved forward conduction after the transfer process with on-state resistance reduced from 1.52 ± 0.05 mΩ⋅cm2 to 1.15 ± 0.05 mΩ⋅cm2 and the blocking strength is not heavily compromised with its mean value reduced from 1015 ± 47 V to 988 ± 57 V. High device yields of the membrane transfer procedure underscores this cost-competitive vertical GaN device technology for high-power applications without the need of expensive GaN substrates.enGallium NitrideGaNVerticalpn-diodeGaN-on-Tungstenjournal article