Thiede, A.A.ThiedeSchlechtweg, M.M.SchlechtwegHurm, V.V.HurmWang, Z.-G.Z.-G.WangLang, M.M.LangLeber, P.P.LeberLao, Z.Z.LaoNowotny, U.U.NowotnyRieger-Motzer, M.M.Rieger-MotzerSedler, M.M.SedlerKöhler, KlausKlausKöhlerBronner, WolfgangWolfgangBronnerFink, T.T.FinkHülsmann, A.A.HülsmannKaufel, G.G.KaufelRaynor, B.B.RaynorSchneider, J.J.SchneiderJakobus, T.T.JakobusSchroth, J.J.SchrothBerroth, M.M.Berroth2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/32866710.1109/EDMO.1997.668590During the past 5 years numerous mixed signal circuits have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs/AlGaAs E/D quantum well HEMT technology. Utilizing the inherent advantages of this material system, optical, analogue, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gbit/s optoelectronic data transmission system, PLL circuits for 15 GHz and 34 GHz, and a 35 GHz phase shifter for phased array antenna applications.enGaAsHEMTmixed-signalMMICphase shifterPhasenschieberPLLTDM621667conference paper