Growth and characterization of 2" and 4" low EPD InP substrate crystals by the Vertical Gradient Freeze (VGF)-method

Schwesig, P.P.SchwesigSahr, U.U.SahrFriedrich, J.J.FriedrichMüller, G.G.MüllerKöhler, A.A.KöhlerKretzer, U.U.KretzerEichler, S.S.EichlerMühe, A.A.Mühe2022-03-102022-03-102005https://publica.fraunhofer.de/handle/publica/35057510.1109/ICIPRM.2005.1517510The growth of twin-free 4 semi-insulating InP crystals is reported, the influence of the EPD of the seed crystal and the cone angle of the crucible on dislocation and twin formation were studied.en670Growth and characterization of 2" and 4" low EPD InP substrate crystals by the Vertical Gradient Freeze (VGF)-methodconference paper