AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties

Bachem, K.H.K.H.BachemPletschen, WilfriedWilfriedPletschenWinkler, K.K.WinklerFleissner, J.J.FleissnerHoffmann, C.C.HoffmannTasker, P.J.P.J.Tasker2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322196We report a fabrication scheme of a new AlGaInP/GaInAs/GaAs-MODFET device. The structure incorporates two novel features: An AlGaInP barrier which provides a larger conduction band offset than the commonly used AlGaAs and a highly carbon-doped p-type GaAs gate structure which supports a very simple fabrication scheme. Using 1 mym optical lithography we have fabricated first demonstrator devices with Ft and Fmax of 60 and 140 GHz, respectively.encarbon dopingchemical vapour depositionKohlenstoffdotierungMOCVDMODFETselbstjustierter Herstellungsprozeßself-aligned process621667AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device propertiesAlGaInP/GaInAs/GaAs-MODFETs mit kohlenstoffdotiertem p+ -GaAs-Gate, ein neues Bauelementekonzept, seine Implementierung und Eigenschaften des Bauelementesconference paper