Mueller, D.D.MuellerFella, C.C.FellaAltmann, F.F.AltmannGraetz, J.J.GraetzBalles, A.A.BallesRing, M.M.RingGambino, J.J.Gambino2022-05-062022-05-062021https://publica.fraunhofer.de/handle/publica/41718710.1109/IPFA53173.2021.9617279In this paper, we show that nano-CT imaging can provide detailed information on the degradation that occurs in power device metallization during a fast PTC stress. Nano-CT imaging provides a high resolution, 3D imaging method to understand degradation mechanisms in packaged power semiconductor devices.enconference paper