Sinnwell, MatthiasMatthiasSinnwellDoering, PhilippPhilippDoeringDriad, RachidRachidDriadDammann, MichaelMichaelDammannMikulla, MichaelMichaelMikullaQuay, RüdigerRüdigerQuay2022-05-062022-05-062021https://publica.fraunhofer.de/handle/publica/41748810.1109/WiPDA49284.2021.9645137In this work, the deep-level trapping behaviour of GaN-on-GaN current aperture vertical electron transistors (CAVETs) is characterised by means of current transient measurements and compared to AlGaN/GaN high-electron mobilityt ransistors (HEMTs) fabricated on the same wafer. To the best of our knowledge, this represents the first analysis of deep-leveltraps in a GaN-based CAVET. In both structures, a single deeplevel with an activation energy of (1.086 ± 0.015) eV (CAVET)and (0.812 ± 0.032) eV (HEMT) is found to dominate the observed transient responses.en667conference paper