Möhrle, M.M.MöhrleGrützmacher, D.D.GrützmacherRosenzweig, M.M.RosenzweigDüser, H.H.Düser2022-03-082022-03-081991https://publica.fraunhofer.de/handle/publica/31935010.1109/ICIPRM.1991.147333Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm-2. depending on the number of wells. The characteristic temperature T0 of the laser structures was about 60 K.engallium arsenidegallium compoundsiii-v semiconductorsindium compoundssemiconductor junction laserslaser propertiesridge-waveguide lasersseparate-confinement-multi-quantum-well-structuresthreshold current densitiescharacteristic temperaturelaser structures1.35 micron60 kInP substratesInGaAs-InGaAsp-InP structures621conference paper