Pichler, P.P.PichlerOrtiz, C.J.C.J.OrtizColombeau, B.B.ColombeauCowern, N.E.B.N.E.B.CowernLampin, E.E.LampinClaverie, A.A.ClaverieCristiano, F.F.CristianoLerch, W.W.LerchPaul, S.S.Paul2022-03-102022-03-102004https://publica.fraunhofer.de/handle/publica/345880A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks. In industrially relevant situation, it needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This article describes the experimental work performed or used to calibrate model parameters as independently as possible. The combined model is then applied to ultra-shallow junction formation by annealing boron implanted into crystalline or preamorphized silicon.enboronsilicondiffusionactivationsimulationmodeling670620530conference paper