Lange, StefanStefanLangeFett, BastianBastianFettKabakli, Özde SeymaÖzde SeymaKabakliSchulze, PatriciaPatriciaSchulzeAdner, DavidDavidAdnerKroyer, ThomasThomasKroyerBogati, ShankarShankarBogatiHerbig, BettinaBettinaHerbigHagendorf, ChristianChristianHagendorfSextl, GerhardGerhardSextlMandel, Karl-SebastianKarl-SebastianMandel2023-06-132023-06-132023https://publica.fraunhofer.de/handle/publica/44270110.1002/pssa.202200882Nickel oxide ((Formula presented.)) is a promising hole transport material for perovskite/Si tandem solar cells. Various silicon cell architectures may be used as bottom cells. The polycrystalline (poly-Si) (Formula presented.) tunnel diode is expected to be a high-efficiency interconnection scheme between the two subcells of monolithic tandems in p-i-n configuration with a high thermal budget, excellent passivation properties, and low contact resistivity. However, (Formula presented.) is then interfaced to poly-Si((Formula presented.)) and the chemical integrity of the interface due to the necessity of annealing treatments has to be questioned. For this purpose, the (Formula presented.) /poly-Si contact resistivity for different annealing temperatures is investigated between 100 and 500 °C, and two different (Formula presented.) deposition techniques, namely, wet-chemically applied and sputter-deposited (Formula presented.). The values of more than (Formula presented.) are obtained. The insertion of a nm-thin metallic Ni interlayer is shown to enable a tremendous decrease of the contact resistivity by 2-3 orders of magnitude. The formation of (Formula presented.) is proven by highly resolved (scanning) transmission electron microscopy ((S)TEM) coupled with energy-dispersive X-ray spectroscopy (EDXS). This interfacial engineering approach is expected to provide an effective way of improving the contact properties and integrability of (Formula presented.) into various tandem cell processes.encontact resistivityinterfacenickel silicideperovskite silicon tandemsilicon oxidetransmission electron microscopyDDC::500 Naturwissenschaften und Mathematik::530 PhysikDDC::500 Naturwissenschaften und Mathematik::540 Chemiejournal article