Schubert, T.T.SchubertTrindade, B.B.TrindadeWeißgärber, T.T.WeißgärberKieback, B.B.Kieback2022-03-102022-03-102008https://publica.fraunhofer.de/handle/publica/35793810.1016/j.msea.2006.12.146Thermal aspects are becoming increasingly important for the reliability of the electronic components due to the continuous progress of the electronic industries. Therefore, the effective thermal management is a key issue for packaging of high performance semiconductors. The ideal material working as heat sink and heat spreader should have a CTE of (4-8) x 10(exp -6) K(exp -1) and a high thermal conductivity. Metal matrix composites offer the possibility to tailor the properties of a metal by adding an appropriate reinforcement phase and to meet the demands in thermal management. Copper/SiC and copper/diamond composites have been produced by powder metallurgy. The major challenge in development of Cu/SiC is the control of the interfacial interactions. Silicon carbide is not stable in copper at the temperature needed for the fabrication of Cu/SiC. It is known that the bonding between diamond and copper is very weak in the Cu/diamond composite. Improvements in bonding strength and thermo-physical properties of the composites have been achieved by*a vapour deposited molybdenum coating on SiC powders to control interface reactions,*using atomized Cu(X) alloys with minor additions of carbide formers, e.g. X = Cr, B, to improve the interfacial bonding in Cu-diamond composites. Entnommen aus <a_href="http://www.fiz-technik.de/db/b_tema.htm" target="_blank">TEMA</a>enAnwendungElektronikElektrotechnikBorcarbidChromcarbidDotierung=Fremdatomzusatzelektronisches BauteilGrenzflächeKühlkörperKupfermatrix-Verbundwerkstoffpartikelverstärkter VerbundwerkstoffPulvermetallurgieSiliciumcarbidTemperaturregelungWärmeabfuhrWärmeleitfähigkeitWärmeleitung620660671conference paper