Polytype dependence of transition metal-related deep levels in 4H-, 6H-, and 15R-SiC

Grillenberger, J.J.GrillenbergerAchtziger, N.N.AchtzigerPasold, G.G.PasoldWitthuhn, W.W.Witthuhn2022-03-092022-03-092002https://publica.fraunhofer.de/handle/publica/341282We present an extensive data set on deep states of the transition metals Ti, V, Cr, Ta, and W in the bandgap of the three SiC-polytypes 4H, 6H, and 15R. The data are compared with theoretical predictions for 3C-SiC. The influence of inequivalent lattice sites in Silicon Carbide on the level energies is discussed.en006621Polytype dependence of transition metal-related deep levels in 4H-, 6H-, and 15R-SiCconference paper