Uhnevionak, U.U.UhnevionakBurenkov, A.A.BurenkovStrenger, C.C.StrengerMortet, V.V.MortetBedel-Peireira, E.E.Bedel-PeireiraCristiano, F.F.CristianoBauer, A.J.A.J.BauerPichler, PeterPeterPichler2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38401110.4028/www.scientific.net/MSF.778-780.483For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with sim ulations performed with Sentaurus Device of Synopsys.enhall factorhall-effect measurementsN-Channel 4H-SiC MOSFETsconference paper