Pereiaslavets, B.B.PereiaslavetsBachem, K.K.BachemBraunstein, J.J.BraunsteinEastman, L.F.L.F.Eastman2022-03-092022-03-091995https://publica.fraunhofer.de/handle/publica/324356GaxIn1-xP/InyGa1-yAs/GaAs MODFETs with a pseudomorphic barrier and a pseudomorphic channel were grown by OMVPE. This Al-free material system is the most promising material system for advanced MODFETs on GaAs for high frequency and power applications. Record 2DEG carrier densities of 3.1 10high12 cmhigh-2 for single sided MODFET were measured. 0.25 mym device yield 0.45 W/mm rf power.enGaAsGaInPMODFET658conference paper