Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode

Herden, M.M.HerdenBauer, A.J.A.J.BauerBeichele, M.M.BeicheleRyssel, H.H.Ryssel2022-03-032022-03-032001https://publica.fraunhofer.de/handle/publica/19893510.1016/S0038-1101(00)00270-7en670620530537Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrodejournal article