Burenkov, A.A.BurenkovLorenz, J.J.Lorenz2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/3746062-s2.0-83655180836Self-heating of MOSFETs scaled according to ITRS specifications for the years 2010 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can exceed 100 K and must be considered in IC design. For this purpose, compact models (BSIM3SOI and BSIM4SOI) accounting for self-heating effect were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.en670conference paper