GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission

Rattunde, MarcelMarcelRattundeRösener, B.B.RösenerKaspar, S.S.KasparMoser, R.R.MoserManz, ChristianChristianManzKöhler, KlausKlausKöhlerWagner, J.J.Wagner2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/3665362-s2.0-779575777922-s2.0-84894073603Highly efficient GaSb-based semiconductor-disk-lasers in the 1.9-2.8µm range have been fabricated. they reach output powers > 3W in CW-operation at room temperature. By using intracavity filters, single-frequency emission with a linewidth below 2.3 MHz was achieved.en667GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emissionconference paper