Yu, Y.H.Y.H.YuSchork, R.R.SchorkPichler, P.P.PichlerRyssel, H.H.Ryssel2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18274310.1016/0168-583X(93)95922-RThe diffusion and the electrical activation of arsenic implanted at high temperatures in silicon have been investigated by XTEM observations, SIMS and differential Hall measurements. By correlating SIMSprofiles with the residual defects detected by XTEM for the samples implanted from 500 to 850 degree Celsius, we find that anomalous diffusion markedly correlates with the depth distribution of the residual defects. Interaction with extended defects is responsible for the double-peak structure observed in the sample implanted at 700 degree Celsius. We also find that the arsenic diffusion increases with the implantation temperature in the range of 500 to 800 degree Celsius, accompanying the decreased formation of the residual defects. In relation with thermal diffusion, the radiation enhanced diffusion between 500 to 1000 degree Celsius is several orders of magnitude higher. For implantation temperatures above 850 degree Celsius, however, the arsenic diffusion decreases with increasing im plantation temperature. This can be explained in terms of the assumption that the diffusion increases linearly with the oversaturation of the point defects and that these point defects recombine faster at higher temperature. The electrical activity continues to increase with the implantation temperature. The highest electrical activity, about 74 %, is obtained after implantation at 1000 degree Celsius. In conclusion, our investigation indicates that the implantation temperature plays an important role in the formation of the residual defects which have great influence on the diffusion and activation of arsenic implanted at high temperature.en670620530539journal article