Alexander, M.G.W.M.G.W.AlexanderNido, M.M.NidoRühle, W.W.W.W.RühleReimann, K.K.ReimannPloog, K.K.PloogKöhler, KlausKlausKöhler2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/178446Non-resonant electron tunneling through a 6nm thick Al sub 0.35 Ga sub 0.65 As barrier is investigated by time-resolved photoluminescence. Application of hydrostatic pressure at 5 K reveals that tunneling via virtual X-states is at least 800 times less efficient than via virtual Gamma-states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well into real X-states in the barriers is observed.encoupled quantum wellsgekoppelte Quantum WellsIII-V HalbleiterIII-V semiconductorsquantum wellstime resolved photoluminescencetunnelingtunnelnzeitaufgelöste Photolumineszenz621667541journal article