Harris, C.I.C.I.HarrisMonemar, B.B.MonemarBrunthaler, G.G.BrunthalerKalt, H.H.KaltSchweizer, T.T.SchweizerKöhler, KlausKlausKöhler2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/18065610.1016/0749-6036(91)90169-RA series of doped GaAs/AlGaAs single quantum well samples has been investigated using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The samples are of 100 A well width and are doped in the central 50 A with Si in the range 5 x 10 high 8 to 2 x 10 high 12 cm high -2. A strong dependence of the optical spectra on the photon energy of excitation is observed. This dependence is interpreted in terms of a charge transfer process between the AlGaAs barrier and the quantum well (QW), which determines the charge and potential distribution in the QW.enIII-V HalbleiterIII-V semiconductorsoptical propertyoptische EigenschaftQuanten-Topfquantum wells621667540journal article