Stolz, W.W.StolzHauser, M.M.HauserPloog, K.K.PloogRamsteiner, M.M.RamsteinerWagner, J.J.Wagner2022-03-082022-03-081990https://publica.fraunhofer.de/handle/publica/317450Raman scattering by local vibrational modes (LVM) is demonstrated to allow a direct assessment of Si or Be incorporation in single delta-doped GaAs layers. Placing the Si doping spike at different depths underneath the sample surface a strongly asymmetric Si sub Ga depth profile, probably due to segregation, is obtained by this Raman scattering method. In addition electronic Raman scattering data are reported which also indicate a considerable broadening of the doping spike.endelta-dopingDelta-Dotierungdoped GaAsdotiertes GaAslocal vibrational spectroscopySpektroskopie lokalisierter Schwingungsmoden621667Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopyDotierungseinbau in Delta-dotierten GaAs-Schichten untersucht mittels Spektroskopie lokalisierter Schwingungsmodenconference paper