2022-03-082022-03-082002https://publica.fraunhofer.de/handle/publica/305265Production of an insulation layer, functioning as an inter-metal dielectric (IMD), involves: (a) covering a substrate surface (2) with a first insulating layer (3) and then a metal (preferably aluminium) layer; (b) photo-structuring the metal layer to form circuit lines (4) which are then covered with a second insulating layer (7) on their surfaces and side faces (6); (c) removing the second insulating layer material (7) from the first insulating layer regions (3) between the circuit lines (4); and (d) depositing a third insulating layer (8) on the resulting structure by ozone-activated CVD with a growth rate which is greater on the first insulating layer material (3) than on the second insulating layer material (7). Preferably, the first insulating layer material (3) is phosphosilicate glass, borophosphosilicate glass or undoped silicate glass and the second insulating layer material (7) is titanium nitride. USE - Used in the production of extremely highly integrated circuits. ADVANTA GE - The intermetal dielectric exhibits little or no 'ear formation' (ear-like bulges of the third insulating layer above the upper edges of the circuit lines).de608621patent1996-19631743