Beltran, A.M.A.M.BeltranDuguay, S.S.DuguayStrenger, C.C.StrengerBauer, A.J.A.J.BauerCristiano, F.F.CristianoSchamm-Chardon, S.S.Schamm-Chardon2022-03-052022-03-052015https://publica.fraunhofer.de/handle/publica/24166310.1016/j.ssc.2015.08.017The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO2 interface.en530journal article