CC BY 4.0De Rose, AngelaAngelaDe RoseErath, DenisDenisErathNikitina, VeronikaVeronikaNikitinaSchube, JörgJörgSchubeGüldali, DeryaDeryaGüldaliMinat, ÄdemÄdemMinatRößler, TorstenTorstenRößlerRichter, AlexeiAlexeiRichterKirner, SimonSimonKirnerKraft, AchimAchimKraftLorenz, AndreasAndreasLorenz2024-12-102024-12-102023Note-ID: 00008A16https://doi.org/10.24406/publica-3921https://publica.fraunhofer.de/handle/publica/47982610.1016/j.solmat.2023.11251510.24406/publica-3921In this work, we present results on various low-temperature approaches for the metallization and interconnection of highefficiency solar cells as silicon heterojunction (SHJ) or perovskite silicon tandems. By using fine line screen printing for the cell metallization and Ag-free or -reduced interconnection technologies, we demonstrate the potential of these approaches both for SHJ and perovskite silicon tandem cells. Furthermore, low-temperature (LT, ~200 °C) or ultra-low-temperature (ULT, ~150 °C) processes are utilized for metallization and interconnection to treat these temperature-sensitive solar cells with a reduced energy consumption. We compare LT soldering of SHJ cells with Pb-free alloys to state-of-the-art soldering processes and interconnection with electrically conductive adhesives (ECAs). For successful module integration of perovskite silicon tandem solar cells, these findings provide the basis to build full-size tandem modules with different interconnection technologies.enInterconnectionlow-temperaturePerovskite/SiliconSilicon HeterojunctionSolar cell metallizationTandem Solar Celljournal article