Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks

Under CopyrightIglesias, V.V.IglesiasErlbacher, T.T.ErlbacherRommel, MathiasMathiasRommelMurakami, K.K.MurakamiBauer, A.J.A.J.BauerFrey, L.L.FreyPorti, M.M.PortiMartin-Martinez, J.J.Martin-MartinezRodriguez, R.R.RodriguezNafria, M.M.NafriaAymerich, X.X.AymerichBersuker, G.G.Bersuker2022-03-114.9.20122012https://publica.fraunhofer.de/handle/publica/37645310.24406/publica-fhg-376453enconductive AFMcAFMhigh-kdielectric breakdownTDDBgraingrain boundary670620530Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacksposter