Hood, A.A.HoodHoffmann, D.D.HoffmannWei, Y.Y.WeiFuchs, F.F.FuchsRazeghi, M.M.Razeghi2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21091810.1063/1.2172399The residual carrier backgrounds of binary type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths around 5 µm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 10(exp 15) cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 10(exp 14) cm-3.enCV analysisCV-Analyseinfrared photodiodeInfrarot-PhotodiodeInAs/GaSb superlatticeInAs/GaSb ÜbergitterinfraredInfrarot621667journal article