Strenger, C.C.StrengerUhnevionak, V.V.UhnevionakMortet, V.V.MortetOrtiz, G.G.OrtizErlbacher, T.T.ErlbacherBurenkov, A.A.BurenkovBauer, A.J.A.J.BauerCristiano, F.F.CristianoBedel-Pereira, E.E.Bedel-PereiraPichler, P.P.PichlerRyssel, H.H.RysselFrey, L.L.Frey2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38530110.4028/www.scientific.net/MSF.778-780.583In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm2/Vs to 92.4 cm2/Vs, it will be shown that for p-doping concentrations above 5·1016 cm-3 Coulomb scattering is the dominant scattering mechanism for both, low-and high-field mobility. In contrast, for p-doping concentrations below 5·1016, cm-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.enconference paper