Comparison of patterning silicon and silicon carbide using focused ion beam

Under CopyrightVeerapandian, S.K.P.S.K.P.VeerapandianBeuer, SusanneSusanneBeuerRumler, MaximilianMaximilianRumlerStumpf, FlorianFlorianStumpfThomas, KeithKeithThomasPillatsch, L.L.PillatschMichler, JohannesJohannesMichlerFrey, LotharLotharFreyRommel, MathiasMathiasRommel2022-03-129.4.20152014https://publica.fraunhofer.de/handle/publica/38700210.24406/publica-fhg-387002enFIBsiliconsilicon carbide670620530Comparison of patterning silicon and silicon carbide using focused ion beamposter