Reiner, RichardRichardReinerLerner, RalfRalfLernerWaltereit, PatrickPatrickWaltereitHansen, Nis HaukeNis HaukeHansenMönch, StefanStefanMönchFecioru, AlinAlinFecioruGomez, DavidDavidGomez2022-03-142022-03-142021https://publica.fraunhofer.de/handle/publica/41184410.23919/ISPSD50666.2021.9452264This work reports on the progress of the hetero-integration of GaN-HEMTs on CMOS wafers by micro-transfer-printing (mTP). 200 V and 600 V class device types are successfully transferred from a GaN-on-Si source wafer to a processed CMOS target wafer. Technologies and process steps of the micro-transfer-printing are briefly discussed. Both device types are characterized, before micro-transfer-printing on the original Si substrate, and after micro-transfer-printing on the CMOS wafer. The comparison discloses the impact of the micro-transfer-print process on the electrical performance.enGaN-on-CMOSmicro Transfer Printinghetero-integrationhybrid integrationchipletdie-attachwafer transfer processing667conference paper