Under CopyrightJuneja, NimishNimishJunejaTutsch, LeonardLeonardTutschFeldmann, FrankFrankFeldmannFischer, AndreasAndreasFischerBivour, MartinMartinBivourMoldovan, AnamariaAnamariaMoldovanHermle, MartinMartinHermle2022-03-1413.3.20202019https://publica.fraunhofer.de/handle/publica/40687310.24406/publica-r-40687310.1063/1.5123835In this work indium tin oxide (ITO) was deposited at low temperature using DC magnetron sputtering under the addition of hydrogen gas. Optical and electrical film properties were studied as a function of deposition and subsequent annealing parameters. A strong correlation between the bulk properties and the ITO film morphology could be observed. Post-deposition annealing of the 100 nm thick ITO layers was performed in ambient air at temperatures between 200°C and 600°C. This covers the relevant temperature range applied for the metallization of amorphous silicon based heterojunction solar cells (∼200°C) but also for post-deposition treatments at elevated temperatures, favoured for the poly-Si based passivating contact technology (TOPCon). The addition of hydrogen to the sputtering gas mixture considerably affected the opto-electronic properties of the amorphous ITO films in the pre-annealed state, mainly by increasing the charge carrier density. Furthermore the crystallization process was influenced positively, being reflected in larger crystallites leading to higher electron mobility in poly-crystalline ITO.enPhotovoltaikSilicium-PhotovoltaikOberflächen: KonditionierungPassivierungLichteinfangHerstellung und Analyse von hocheffizienten Si-Solarzellen621697conference paper