SIMOX, an efficient etch-stop to fabricate silicon membranes with well defined thickness. Part 2

Dura, H.-G.H.-G.DuraGassel, H.H.GasselMokwa, W.W.MokwaVogt, H.H.Vogt2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/320225In this paper it is shown that low dose SIMOX is an efficient etch-stop to fabricate silicon membranes with well defined thickness. Due to the very high selectivity of TMAH as etch solution a four times lower oxygen dose than for standard SIMOX production is sufficient to form a good etch stop layer. This technique allows for a simple and very cost effective batch process production in addition into a large improvement of the silicon film quality.enÄtzenburied oxideepitaxial layerEpitaxialschichtetch stopetchingMembranMembranesSIMOX621SIMOX, an efficient etch-stop to fabricate silicon membranes with well defined thickness. Part 2conference paper