Hong, R.J.R.J.HongJiang, X.X.JiangSzyszka, B.B.SzyszkaSittinger, V.V.SittingerXu, S.H.S.H.XuWerner, W.W.WernerHeide, G.G.Heide2022-03-032022-03-032004https://publica.fraunhofer.de/handle/publica/20554810.1016/j.jcrysgro.2003.10.085en667548Erratum to "comparison of the ZnO:Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering" (J. Crystal Growth 253 (2003) 117-128)erratum