Revised Parametrization of the Recombination Velocity at SiO2/SiNX-Passivated Phosphorus-Diffused Surfaces

Under CopyrightWolf, AndreasAndreasWolfEgle, J.J.EgleMack, SebastianSebastianMackHöffler, HannesHannesHöfflerHerrmann, D.D.HerrmannLohmüller, SabrinaSabrinaLohmüllerHorzel, JörgJörgHorzelFell, AndreasAndreasFell2022-03-156.10.20212021https://publica.fraunhofer.de/handle/publica/41245610.24406/publica-fhg-412456enPhotovoltaiksilicon solar cellSilicium-PhotovoltaikDotierung und DiffusionOberflächen: KonditionierungPassivierungLichteinfang621697Revised Parametrization of the Recombination Velocity at SiO2/SiNX-Passivated Phosphorus-Diffused Surfacespresentation