Tessmann, AxelAxelTessmannHaydl, W.H.W.H.HaydlKrems, T.T.KremsNeumann, M.M.NeumannMassler, HermannHermannMasslerVerweyen, L.L.VerweyenHülsmann, A.A.HülsmannSchlechtweg, M.M.Schlechtweg2022-03-092022-03-091998https://publica.fraunhofer.de/handle/publica/33023310.1109/MWSYM.1998.705084A W-band variable gain amplifier MMIC with 37 dB gain at 94 GHz and a gain control range of over 70 dB has been developed. The circuit consists of four dualgate HEMT stages, using a 0.15 mu m AlGaAs /InGaAs/GaAs PM-HEMT technology. The chip was realized in coplanar technology and requires an area of only 1 x 3 mm2. The resulting power gain density is 12 dB/mm2 at 94 GHz.encascodeHEMThigh gainhohe VerstärkungKaskodeMMICphased arrayPhasensteuerung621667conference paper