Böttger, SimonSimonBöttgerWagner, Christian FriedemannChristian FriedemannWagnerLorkowski, F.F.LorkowskiHartmann, MartinMartinHartmannHeldt, GeorgGeorgHeldtReuter, DannyDannyReuterSchuster, JörgJörgSchusterHermann, SaschaSaschaHermann2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/40572910.1109/TRANSDUCERS.2019.8808571From the perspective of wafer-level integration technologies, this work presents theoretical and experimental insights on fundamental device properties of single-walled carbon nanotubes (SWCNTs) based giant piezoresistive transducers. The role of contacts in such devices and their contribution to a significant tunneling-related sensitivity enhancement is demonstrated. The origin of this phenomenon is the strain dependence of the effective Schottky barrier (SB) width, which is modulated by a drain-source voltage (V DS ) dependent large built-in electric field F at the Schottky barrier. Moreover, perspectives for forthcoming sensor generations exposing operation regimes beyond intrinsic sensitivity are revealed.enconference paper