Helmers, HenningHenningHelmersFranke, A.A.FrankeLackner, DavidDavidLacknerHöhn, OliverOliverHöhnPredan, FelixFelixPredanDimroth, FrankFrankDimroth2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/41014910.1109/PVSC45281.2020.9300717Photovoltaic cells for conversion of wavelengths in the O-band around 1310 nm are developed. Excellent performance with an efficiency of 51.1% at elevated irradiance is demonstrated with an InGaAsP based cell grown lattice matched on InP. Under one sun irradiance a bandgap-voltage difference of only W OC =331 mV is achieved. In addition, metamorphic GaInAs cells are introduced, which are grown on a step graded metamorphic buffer on GaAs substrates. Despite the metamorphic growth, good material quality as well as promising uniformity across a full 4"" wafer are demonstrated with a median bandgap-voltage difference of W OC =226 mV at elevated short-circuit current densities of about 2.7 A/cm 2.enPhotovoltaik1310 nmGaInAsIII-V semiconductorInGaAsPLaser Power ConvertermetamorphicO-bandOptical Power Transmissionphotonic power converterPower-by-Lightpower-over-fiberIII-V- und Konzentrator-PhotovoltaikIII-V Epitaxie und SolarzellenPower-by-Light62169751% Efficient Photonic Power Converters for O-Band Wavelengths around 1310 nmconference paper