Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography

Hülsmann, A.A.HülsmannBronner, WolfgangWolfgangBronnerKöhler, KlausKlausKöhlerBraunstein, J.J.BraunsteinTasker, P.J.P.J.Tasker2022-03-032022-03-031994https://publica.fraunhofer.de/handle/publica/18449610.1143/JJAP.33.7194We have developed a technology to fabricate pseudomorphic 0.3micrometer gatelength modulation doped field-effect transistors (MODFETs ) having a brakdown voltage up to 20 Volts. This technology uses mmolecular beam epitaxy (MBE) to grow the InGaAs/AlGaAs/GaAs heterostructure with two pulse doping layers on 3 inch semiisolating GaAs wafers. A mix and match lithography was applied using an i-line stepper and an eledtron beam diect write process to define the mushroom shaped gates (T-gates). The breakdown enhancement is achieved by a self aligned selective double dry etched gate recess using AlGaAs etch stop layers. We investigated the heterostructure doping and influence of the gate recess process to the device performance.enbreakdown voltageDurchbruchspannungGate-recesspseudomorphe MODFETpseudomorphic MODFETT-gate621667530Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithographyHerstellung von pseudomorphen modulationsdotierten Feldeffekttransistoren mit hoher Durchbruchspannung unter Verwendung einer doppelt trockengeätzten Gate-Recess Technologie in Kombination mit E-Beam T-Gate Litographiejournal article