Under CopyrightHelmers, HenningHenningHelmersHöhn, OliverOliverHöhnLackner, DavidDavidLacknerSchygulla, PatrickPatrickSchygullaKlitzke, MalteMalteKlitzkeSchön, JonasJonasSchönPellegrino, CarmineCarminePellegrinoOliva, EduardEduardOlivaSchachtner, MichaelMichaelSchachtnerBeutel, PaulPaulBeutelHeckelmann, StefanStefanHeckelmannPredan, FelixFelixPredanOhlmann, JensJensOhlmannSiefer, GeraldGeraldSieferDimroth, FrankFrankDimroth2024-03-182024-03-182024Note-ID: 0000A132https://publica.fraunhofer.de/handle/publica/464227https://doi.org/10.24406/publica-280310.1117/12.300035210.24406/publica-2803III-V compound semiconductors provide a high degree of flexibility in bandgap engineering and can be realized through epitaxial growth in high quality. This enables versatile spectral matching of photovoltaic absorber materials as well as the fabrication of complex layer structures of vertically stacked subcells and tunnel junctions. This work presents progress in two fields of applications of III-V photovoltaics: concentrator solar cells and photonic power converters. We present latest results in advancing solar energy conversion efficiencies to 47.6% based on a wafer-bonded four-junction concentrator solar cell. Furthermore, we provide an overview of the latest development results regarding photonic power converters, showcasing several record devices. We briefly introduce a new metallization technique using electro-plated silver for handling high currents and first 10-junction InGaAs devices for optical telecommunication wavelengths. Overall, this paper highlights the potential of III-V compound semiconductors in achieving high efficiencies and spectral matching, offering promising prospects for future applications.enConcentrator PhotovoltaicsCPVIII-VIII-V solar cellslaser power beamingmultijunctionoptical power transmissionphotonic powerphotonic power converterPhotovoltaicssolar cellconference paper