Rigorous electromagnetic field mask modeling and related lithographic effects in the low k(1) and ultrahigh numerical aperture regime

Erdmann, A.A.ErdmannEvanschitzky, P.P.Evanschitzky2022-03-032022-03-032007https://publica.fraunhofer.de/handle/publica/21404110.1117/1.2778447en621670Rigorous electromagnetic field mask modeling and related lithographic effects in the low k(1) and ultrahigh numerical aperture regimejournal article