Erlbacher, T.T.ErlbacherSchwarzmann, H.H.SchwarzmannKrach, F.F.KrachBauer, A.J.A.J.BauerBerberich, S.E.S.E.BerberichKasko, I.I.KaskoFrey, L.L.Frey2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38792510.1109/ESTC.2014.6962794The reliability of monolithic integrated 200 V RC-snubbers in silicon is investigated both on wafer and module level. The wafer level measurements indicate that the capacitor dielectric is capable of repetitively withstanding 200 V pulses with a continuous use voltage of 150 V for 46 years with a failure rate of 1 ppm. Potentially early failing devices can be identified on wafer level by a screening test. The RC-snubbers exhibit excellent stability to high temperature and high humidity high temperature based stress tests and to thermal cycling. This makes these devices a promising alternative to discrete surface mounted devices in RC snubber applications for modules in power electronic applications.enconference paper